Passive Voltage Contrast for Dopant Calibration

Thursday, October 8, 2026: 9:40 AM
Mr. Greg Johnson , Carl Zeiss Microscopy, Poughkeepsie, NY
Dr. Rainer Arnold , Carl Zeiss Microscopy, Poughkeepsie, OH
Ms. Hyun Hwa Kim , Carl Zeiss Microscopy, Oberkochen, Oberkochen, Germany
Dr. Markus Boese , Carl Zeiss Microscopy, Oberkochen, Oberkochen, Germany
Dr. Thomas Schweinboeck , Infineon, Neubiberg, CA, Germany
Dr. Soeren Hommel , Infineon, Neubiberg, CA, Germany
Dr. Aidan Arthur Taylor , Infineon Technologies Austria AG, Villach, Carinthia, Austria

Summary:

A statistical evaluation of electron microscope beam conditions was undertaken in order to optimize passive voltage contrast (PVC) on a silicon dopant standard. Results show very strong relationship to working distance and beam landing energy. An alternative detector with increased sensitivity to low-energy secondary electrons extended the range of working distances and energies for useful PVC>
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