Reducing Time‑to‑Result in Wafer Physical Defect Review via Correlative Light Microscopy Pre‑Targeting and Synchronized Automated SEM Imaging

Wednesday, October 7, 2026: 11:40 PM
Anthony Lisi , Carl Zeiss Microscopy LLC, Dublin, CA
Efrat Moyal , Carl Zeiss Microscopy LLC, Dublin, CA
Dr. David Giraldo , Carl Zeiss Microscopy LLC, Dublin, CA
Michael O'Relley , Carl Zeiss Microscopy LLC, Dublin, CA
Nathaniel Cohan , Carl Zeiss Microscopy LLC, Dublin, CA
Dr. Mansoureh Norouzi Rad , Carl Zeiss Microscopy LLC, Dublin, CA

Summary:

Physical defect review following wafer inspection remains a significant throughput bottleneck in semiconductor failure analysis workflows. While scanning electron microscopy (SEM) provides the resolution required for defect characterization, substantial time is often spent relocating candidate defects that were previously identified during optical inspection. This challenge is particularly pronounced for repetitive device structures, low-contrast defects, and workflows involving sample transfer between instruments. This work presents two complementary correlative light and electron microscopy (CLEM) workflows designed to reduce the time required for defect relocation between optical microscopy and SEM analysis. The first approach utilizes software-based correlation through three-point stage registration, enabling direct navigation to defect sites using a shared optical and electron microscopy data space. The second approach employs physical ink-based fiducial markers placed during optical inspection and combines these markers with SEM navigation imaging and automated acquisition protocols. The advantages, limitations, and use cases for each workflow are discussed. Case studies demonstrate how LM-guided defect targeting can reduce manual SEM navigation effort, improve workflow efficiency, and support more consistent defect review in semiconductor failure analysis environments.
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