Observation of Channel Strain Release in pMOS Device with Low Idsat Using Energy-Filtered Nano-Beam Diffraction Technique
Observation of Channel Strain Release in pMOS Device with Low Idsat Using Energy-Filtered Nano-Beam Diffraction Technique
Tuesday, November 11, 2014: 4:15 PM
310 B (George R. Brown Convention Center )
Summary:
TEM NBD technqiue was used to show direction correlation between low Idsat and channel strain release.
TEM NBD technqiue was used to show direction correlation between low Idsat and channel strain release.