Failure Analysis of Bit Line to SNC Leakage Fail in 2xnm DRAM Using Nano Probing Technique
Failure Analysis of Bit Line to SNC Leakage Fail in 2xnm DRAM Using Nano Probing Technique
Tuesday, November 11, 2014: 11:10 AM
310 B (George R. Brown Convention Center )
Summary:
Leakage current from bit line to SNC is one of the most critical issues in DRAM operation. Such failure becomes more difficult to visualize as the device shrinkage. In thsi study, bit line to SNC leakage fail was analyzed using nano-probing tool in 2xnm DRAM technology.
Leakage current from bit line to SNC is one of the most critical issues in DRAM operation. Such failure becomes more difficult to visualize as the device shrinkage. In thsi study, bit line to SNC leakage fail was analyzed using nano-probing tool in 2xnm DRAM technology.