Electrical Characterization and Nanoprobing

Tuesday, November 11, 2014: 9:55 AM-12:00 PM
310 B (George R. Brown Convention Center )
Session Chairs:
Dr. Stefan B. Kaemmer and Mr. Izak Kapilevich
9:55 AM
Identification Failure Mechanism of Threshold Voltage Shift Induced By Dopant Diffuse Via Nano-Probe, Simulation and Wet Stain Techniques
Ms. May Yang, Semiconductor Manufacturing International (Beijing) Corp; Mr. Lee JH, Semiconductor Manufacturing International (Beijing) Corp
10:20 AM
Analysis of InGaAs Epi Defects by Conductive AFM
Mr. Aaron Cordes, SEMATECH; Mr. Tom Dyer, SEMATECH; Mr. Sean M. Hand, Bruker BNS
10:45 AM
Utilizing Nanoprobing and Circuit Diagnostics to Identify Key Failure Mechanism of Otherwise Non-Visible Defects in 20nm Logic Devices
Dr. M. K. Dawood, Globalfoundries Singapore Pte. Ltd.; Dr. Changqing Chen, Globalfoundries Singapore; Mr. P.K. Tan, Globalfoundries Singapore Pte. Ltd.; Ms. Sabitha James, Globalfoundries Singapore Pte. Ltd.; Mr. Pariyarathu Salimon Limin, Globalfoundries Singapore Pte. Ltd.; H. Tan, Globalfoundries Singapore Pte. Ltd.; Mr. H.H. Yap, Global Foundries; Mr. G.R. Low, Globalfoundries Singapore Pte. Ltd.; J. C. Lam, GLOBALFOUNDRIES Singapore Pte Ltd; Dr. Z.H. Mai, GLOBALFOUNDRIES Singapore Pte Ltd; Mr. Dayanand Nagalingam, GLOBALFOUNDRIES Singapore Pte Ltd
11:10 AM
Failure Analysis of Bit Line to SNC Leakage Fail in 2xnm DRAM Using Nano Probing Technique
Mr. Jaeho Won, SK hynix; Mr. Jundong Kim, SK hynix; Mrs. Jina Kim, SK hynix; Mrs. Jihye Shin, SK hynix; Mr. Jihoon Kim, SK hynix; Ms. Kyungrim Lee, SK hynix; Ms. Miae Yoon, SK hynix; Mr. Jong Hak Lee, SK Hynix Semiconductor Inc; Mr. Jaeyun Lee, SK Hynix Semiconductor Inc; Mr. Weonjoon Suh, SK hynix; Dr. Hyeonsoo Kim, SK hynix
11:35 AM
Analysis of an Anomalous CMOS Transistor Exhibiting Drain to Source Leakage –Its Model and Cause
Mr. Yuk L. Tsang, Freescale Semiconductor Inc.; Mr. Alex VanVianen, Freescale Semiconductor Inc.; Xiang-Dong wang, Freescale Semiconductor; N. David Theodore, Freescale Semiconductor
12:00 PM
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