Identification Failure Mechanism of Threshold Voltage Shift Induced By Dopant Diffuse Via Nano-Probe, Simulation and Wet Stain Techniques

Tuesday, November 11, 2014: 9:55 AM
310 B (George R. Brown Convention Center )
Ms. May Yang , Semiconductor Manufacturing International (Beijing) Corp, Beijing, China
Mr. Lee JH , Semiconductor Manufacturing International (Beijing) Corp, Beijing, China

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