Identification of Subtle Defect By Means of High Kev SEM Passive Voltage Contrast
Identification of Subtle Defect By Means of High Kev SEM Passive Voltage Contrast
Tuesday, November 11, 2014: 3:25 PM
310 B (George R. Brown Convention Center )
Summary:
This paper presents two cases utilizing high KeV SEM Passive Voltage Contrast (PVC) for defect localization that is impossible with other techniques. The first case is regarding thin layer resistor of CrSi. De-processing or polishing to expose the defective layer may damage it. High KeV SEM PVC combined with FIB etching revealed defect with 3-dimentional images (top view and x-section image). The second case involves a FIB beam sensitive via chain.. This paper discusses the way to avoid beam caused sample damage and how to apply it for further grounding and FIB cross sectioning to reveal the defect.
This paper presents two cases utilizing high KeV SEM Passive Voltage Contrast (PVC) for defect localization that is impossible with other techniques. The first case is regarding thin layer resistor of CrSi. De-processing or polishing to expose the defective layer may damage it. High KeV SEM PVC combined with FIB etching revealed defect with 3-dimentional images (top view and x-section image). The second case involves a FIB beam sensitive via chain.. This paper discusses the way to avoid beam caused sample damage and how to apply it for further grounding and FIB cross sectioning to reveal the defect.