High-Resolution Backside GMR Magnetic Current Imaging on a Contour-Milled Globally Ultrathin Die
High-Resolution Backside GMR Magnetic Current Imaging on a Contour-Milled Globally Ultrathin Die
Monday, November 10, 2014: 11:15 AM
Grand Ballroom B (George R. Brown Convention Center )
Summary:
Backside MCI and LIT are used on a low-resistance power supply short through a full-thickness silicon die and subsequently on the same device immediately above the active layer after global contour-milling of substantially all the substrate silicon. The work will demonstrate the advantages of this non-destructive edge-to-edge deprocessing method capable of accounting for the varying stress-induced warpage and resulting contours in multilayer devices. Also highlighted will be the significant improvements in magnetic current imaging resolution gained by completely exposing the active circuitry.
Backside MCI and LIT are used on a low-resistance power supply short through a full-thickness silicon die and subsequently on the same device immediately above the active layer after global contour-milling of substantially all the substrate silicon. The work will demonstrate the advantages of this non-destructive edge-to-edge deprocessing method capable of accounting for the varying stress-induced warpage and resulting contours in multilayer devices. Also highlighted will be the significant improvements in magnetic current imaging resolution gained by completely exposing the active circuitry.