Comparative Study on Decapsulation for Copper and Silver Wire-Bonded Devices

Monday, November 10, 2014: 2:50 PM
310 A (George R. Brown Convention Center )
Mr. Francois Kerisit , LAMIPS, CRISMAT – NXP semiconductors - Presto-Engineering Europe laboratory, CNRS-UMR6508; ENSICAEN, UCBN, CAEN, France
Dr. Bernadette Domengès , LAMIPS, CRISMAT – NXP semiconductors - Presto-Engineering Europe laboratory, CNRS-UMR6508; ENSICAEN, UCBN, CAEN, France
Mr. Michael Obein , Digit Concept, Secqueville-en-Bessin, France

Summary:

In order to reduce costs and improve the bonding process, copper and now silver have been introduced as an alternative to common bonding wire metals (gold and aluminum), leading to new failure analysis issues and especially decapsulation. This study compares the efficiency of wet and dry chemistries for decapsulation on Cu and Ag-alloy wire based ICs. Though plasma decapsulation is a slow process, it appears a good alternative to wet chemistry opening technique as it allows a progressive control of the opening.
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