New Ion Source for High Precision FIB Nanomachining and Circuit Edit
New Ion Source for High Precision FIB Nanomachining and Circuit Edit
Wednesday, November 12, 2014: 3:55 PM
310 B (George R. Brown Convention Center )
Summary:
We present results from early measurements on a new Cs+ low-temperature ion source (LoTIS). These measurements allow credible projections for FIB performance enabled by LoTIS. These projections include sub-1 nm spot size capabilities at 1 pA in a 30 kV beam and total currents from below 1 pA up to several nanoamperes. When integrated with a FIB platform, the LoTIS will offer numerous benefits to the end-user, compared with gallium liquid metal ion source (LMIS) or the helium or neon gas field ion sources (GFIS).
We present results from early measurements on a new Cs+ low-temperature ion source (LoTIS). These measurements allow credible projections for FIB performance enabled by LoTIS. These projections include sub-1 nm spot size capabilities at 1 pA in a 30 kV beam and total currents from below 1 pA up to several nanoamperes. When integrated with a FIB platform, the LoTIS will offer numerous benefits to the end-user, compared with gallium liquid metal ion source (LMIS) or the helium or neon gas field ion sources (GFIS).