Using Energy Dispersive Spectroscopy (EDS) to Determine the Resistance of FIB Jumpers for Circuit Edit
Using Energy Dispersive Spectroscopy (EDS) to Determine the Resistance of FIB Jumpers for Circuit Edit
Wednesday, November 12, 2014: 3:30 PM
310 B (George R. Brown Convention Center )
Summary:
A key capability of focused ion beam (FIB) tools is the ability to deposit conductive materials by introducing organometallic precursors such as tungsten hexacarbonyl (W(CO)6) or (methylcyclopentadienyl)trimethyl platinum (C9H17Pt) into the system. The FIB deposited metal is often used in applications such as the modification of integrated circuits by creating new electrical connections on the device. In this paper, we will demonstrate the determination of the electrical resistivity of FIB deposited metals using energy dispersive spectroscopy (EDS). This technique allows us to measure the chemical composition of the material and directly determine electrical resistivity of FIB metal deposition. The gallium concentration is the main determinate of the resistivity and is the key to the overall resistance of the line.
A key capability of focused ion beam (FIB) tools is the ability to deposit conductive materials by introducing organometallic precursors such as tungsten hexacarbonyl (W(CO)6) or (methylcyclopentadienyl)trimethyl platinum (C9H17Pt) into the system. The FIB deposited metal is often used in applications such as the modification of integrated circuits by creating new electrical connections on the device. In this paper, we will demonstrate the determination of the electrical resistivity of FIB deposited metals using energy dispersive spectroscopy (EDS). This technique allows us to measure the chemical composition of the material and directly determine electrical resistivity of FIB metal deposition. The gallium concentration is the main determinate of the resistivity and is the key to the overall resistance of the line.