33.2
Selective Etching of Highly-p-doped Si Substrate Using Low-p-doped Si epi as an Etch Stop Layer
Selective Etching of Highly-p-doped Si Substrate Using Low-p-doped Si epi as an Etch Stop Layer
Wednesday, November 4, 2015
Exhibit Hall D (Oregon Convention Center )
Summary:
Sample preparation technique for flip chips de-processing from the back side has been proposed. The technique uses HNA chemistry (a mixture of acids: hydrofluoric, nitric and acetic) to wet etch the highly-p-doped Si bulk substrate selectively to the low-p-doped Si “epi”. The procedure can be used as a sample prep technique of flip chip (FC) devices for back side optical probing and FIB (Focused Ion Beam) editing.
Sample preparation technique for flip chips de-processing from the back side has been proposed. The technique uses HNA chemistry (a mixture of acids: hydrofluoric, nitric and acetic) to wet etch the highly-p-doped Si bulk substrate selectively to the low-p-doped Si “epi”. The procedure can be used as a sample prep technique of flip chip (FC) devices for back side optical probing and FIB (Focused Ion Beam) editing.