16.4
Advanced Failure Analysis of Junction Profile Defect by using EBAC_EBIC
Advanced Failure Analysis of Junction Profile Defect by using EBAC_EBIC
Thursday, November 5, 2015: 9:15 AM
Meeting Room D139 & 140 (Oregon Convention Center )
Summary:
As device size shrinks due to recent tech development and circuit complexity rapidly increases, it is becoming increasingly difficult to effectively analyze defects. Against this backdrop, more precise and efficient technique to analyze the root cause of defect is in constant demand. This paper proposes a method to quickly and accurately identify the true cause of device failure by using a nano probe analysis technique, an EBAC/EBIC Technique. The most significant benefit of EBAC/EBIC analysis technique is the ability to identify normality or abnormality of a product with intuitive image. This benefit can minimize damage during pretreatment process of a sample, which has been an issue in an analysis of existing physical properties, and also increase the reliability of analyzed data. In this paper, we identified the root cause of series transistor defect in CIS (CMOS Image Sensor) product by using EBAC/EBIC (analysis) technique, and verified this with the help of SSRM (Scanning Spreading Resistance Microscopy) and APT (Atomic Probe Tomography). By doing so, we confirmed that the analysis technique proposed in this paper is very effective in identifying and pinpointing the true cause and location of the defect.
As device size shrinks due to recent tech development and circuit complexity rapidly increases, it is becoming increasingly difficult to effectively analyze defects. Against this backdrop, more precise and efficient technique to analyze the root cause of defect is in constant demand. This paper proposes a method to quickly and accurately identify the true cause of device failure by using a nano probe analysis technique, an EBAC/EBIC Technique. The most significant benefit of EBAC/EBIC analysis technique is the ability to identify normality or abnormality of a product with intuitive image. This benefit can minimize damage during pretreatment process of a sample, which has been an issue in an analysis of existing physical properties, and also increase the reliability of analyzed data. In this paper, we identified the root cause of series transistor defect in CIS (CMOS Image Sensor) product by using EBAC/EBIC (analysis) technique, and verified this with the help of SSRM (Scanning Spreading Resistance Microscopy) and APT (Atomic Probe Tomography). By doing so, we confirmed that the analysis technique proposed in this paper is very effective in identifying and pinpointing the true cause and location of the defect.