16
Nanoprobing and Electrical Characterization

Thursday, November 5, 2015: 8:00 AM-10:05 AM
Meeting Room D139 & 140 (Oregon Convention Center )
Session Chairs:  Mr. Randal E. Mulder, Device Analysis Lab, Silicon Labs, Austin, TX and Mr. Kent Erington, New Product and Technology Diagnostic Center, Freescale Semiconductor, Austin, TX
8:00 AM
16.1
High Resolution Electron Beam Induced Resistance Change for Fault Isolation with 100nm^2 Localization
Mr. Brett A. Buchea, Intel; Dr. H. J. Ryu, Intel; Dr. Martin von Haartman, Intel; Mr. Christopher S. Butler, Intel; Dr. Tom X. Tong, Intel
8:25 AM
16.2
Plasma FIB DualBeam™ Delayering for Atomic Force nanoProbing™ of 14 nm FinFET Devices in an SRAM Array
Mr. Roger Alvis, FEI Company; Mr. Trevan Landin, FEI Company; Dr. Chad Rue, FEI Company; Mr. Andy Erickson, Multiprobe; Mr. Sean Zumwalt, Multiprobe; Mr. Sinjin Dixon-Warren, Chipworks; Wan-Yi Liu, Materials Analysis Technology Inc.; Shih-Hsin Chang, Materials Analysis Technology Inc.; Te-Fu Chang, Materials Analysis Technology Inc.; Mr. Chia-Hsiang Yen, Materials Analysis Technology Inc.; Pau-Sheng Kuo, Materials Analysis Technology Inc.; Dr. C H Chu, Materials Analysis Technology Inc.
8:50 AM
16.3
Nanoprobing Applications with Capacitance-Voltage (C-V) and Pulsed Current-Voltage (PI-V) Measurements for Device Failure Analysis
Mr. Li-Lung Lai, Semiconductor Manufacturing International (Shanghai) Corporation
9:15 AM
16.4
Advanced Failure Analysis of Junction Profile Defect by using EBAC_EBIC
Mr. Jong Hak Lee, SK hynix
9:40 AM
16.5
Non-visible defect analysis by the nanoprobing methodology
Dr. Changqing Chen, Globalfoundries Singapore
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