34.3
Carrier redistribution analysis of gate-biased SiC power-MOSFET using super-higher-order scanning nonlinear dielectric microscopy

Wednesday, November 4, 2015
Exhibit Hall D (Oregon Convention Center )
Mr. Norimichi Chinone , Tohoku University, Sendai, Japan
Prof. Yasuo Cho , Tohoku University, Sendai, Japan

Summary:

Gate-bias dependent carrier distributions in cross-section of SiC power MOSFET were measured using super-higher-order scanning nonlinear dielectric microscopy.
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