34.2
Environmental Control Scanning Nonlinear Dielectric Microscopy Measurements of p-n Structures, epi-Si Wafers, and SiC Crystal Defects

Wednesday, November 4, 2015
Exhibit Hall D (Oregon Convention Center )
Dr. Jing-Jiang Yu , Hitachi High Technologies America, Inc., Clarksburg, MD
Dr. Takehiro Yamaoka , Hitachi High-Tech Science Corporation, Tokyo, Japan
Mr. Satoshi Hasumura , Hitachi High-Tech Science Corporation, Suntogun, Japan
Dr. Ryusuke Hirose , Hitachi High-Tech Science Corporation, Suntogun, Japan
Mr. Kazunori Ando , Hitachi High-Tech Science Corporation, Suntogun, Japan
Mr. Katsunori Mizuguchi , Hitachi High-Tech Science Corporation, Tokyo, Japan

Summary:

Advantages of vacuum SNDM and ÝC/ÝV measurements in carrier concentration observations and its application to crystal defects of 4H-SiC epitaxial wafer: More stable ÝC/ÝV curves and higher resolution SNDM measurement results were obtained in vacuum, where effects of adsorbed water and contaminations are reduced, dry nitrogen the second, and air the least.
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