34.4
Observation of polarization and two dimensional electron gas in AlGaN/GaN heterostructure using scanning nonlinear dielectric microscopy

Wednesday, November 4, 2015
Exhibit Hall D (Oregon Convention Center )
Mr. Kotaro Hirose , Tohoku University, Sendai, Japan
Mr. Norimichi Chinone , Tohoku University, Sendai, Japan
Prof. Yasuo Cho , Tohoku University, Sendai, Japan

Summary:

We measured AlGaN/GaN heterostructure using scanning nonlinear dielectric microscopy (SNDM) which can measure both carrier and polarization profile in AlGaN/GaN heterostructure. As a result, GaN spontaneous polarization and AlGaN polarization which is sum of spontaneous polarization and piezoelectric polarization were clearly distinguished. Two dimensional electron gas (2DEG) was observed at the AlGaN/GaN interface. This results show that SNDM is useful method for evaluation of 2DEG profile and polarization profile in AlGaN/GaN heterostructure.