9.1
Failure and stress analysis of Cu TSVs using GHz-scanning acoustic microscopy and polariscopy

Tuesday, November 3, 2015: 2:55 PM
Meeting Room D139 & 140 (Oregon Convention Center )
Prof. Ingrid De Wolf , KU Leuven, Leuven, Belgium
Mr. Ahmad Khaled , IMEC, Leuven, Belgium
Dr. Martin Herms , PVA Metrology and Plasma Solutions GmbH, Jena-Maua, Germany
Dr. Matthias Wagner , PVA Metrology and Plasma Solutions GmbH, Jena-Maua, Germany
Dr. Tatjana Djuric , PVA Tepla Analytical Systems GmbH, Westhausen, Germany
Dr. Peter Czurratis , PVA Tepla Analytical Systems GmbH, Westhausen, Germany
Dr. Sebastian Brand , Fraunhofer Institute of Material Mechanics, Halle, Germany

Summary:

This paper discusses the application of two different techniques for failure analysis of Cu through-silicon vias (TSVs) used in 3D stacked-IC technology. The first technique is GHz Scanning Acoustic Microscopy (GHz-SAM), where Rayleigh waves are shown to provide information on voids, delamination and stress near the TSVs. The second is a reflection-based photoelastic technique (SIREX), which is shown to be very sensitive to stress in the Si near TSVs and as such also to any defect affecting this stress, such as delamination and large voids.