9.1
Failure and stress analysis of Cu TSVs using GHz-scanning acoustic microscopy and polariscopy
Failure and stress analysis of Cu TSVs using GHz-scanning acoustic microscopy and polariscopy
Tuesday, November 3, 2015: 2:55 PM
Meeting Room D139 & 140 (Oregon Convention Center )
Summary:
This paper discusses the application of two different techniques for failure analysis of Cu through-silicon vias (TSVs) used in 3D stacked-IC technology. The first technique is GHz Scanning Acoustic Microscopy (GHz-SAM), where Rayleigh waves are shown to provide information on voids, delamination and stress near the TSVs. The second is a reflection-based photoelastic technique (SIREX), which is shown to be very sensitive to stress in the Si near TSVs and as such also to any defect affecting this stress, such as delamination and large voids.
This paper discusses the application of two different techniques for failure analysis of Cu through-silicon vias (TSVs) used in 3D stacked-IC technology. The first technique is GHz Scanning Acoustic Microscopy (GHz-SAM), where Rayleigh waves are shown to provide information on voids, delamination and stress near the TSVs. The second is a reflection-based photoelastic technique (SIREX), which is shown to be very sensitive to stress in the Si near TSVs and as such also to any defect affecting this stress, such as delamination and large voids.