4.2
How Xe and Ga FIB differ in inducing lateral damage on TEM samples

Monday, November 2, 2015: 1:25 PM
Meeting Room D137 & 138 (Oregon Convention Center )
Dr. Tomas Hrncir , TESCAN, Brno, Czech Republic
Dr. Jozef Vincenc Obona , TESCAN, Brno, Czech Republic
Dr. Christian Lang , Oxford Instruments, High Wycombe, United Kingdom
Dr. Martin Petrenec , TESCAN, Brno, Czech Republic
Dr. Jan Michalička , TESCAN ORSAY HOLDING, Brno, Czech Republic

Summary:

We will compare Xe and Ga FIB effect on lateral damage of TEM samples and show clear ways to keep this damage minimized.
See more of: FIB Sample Preparation
See more of: Technical Program