16.1
High Resolution Electron Beam Induced Resistance Change for Fault Isolation with 100nm^2 Localization

Thursday, November 5, 2015: 8:00 AM
Meeting Room D139 & 140 (Oregon Convention Center )
Mr. Brett A. Buchea , Intel, Hillsboro, OR
Dr. H. J. Ryu , Intel, Hillsboro, OR
Dr. Martin von Haartman , Intel, Hillsboro, OR
Mr. Christopher S. Butler , Intel, Hillsboro, OR
Dr. Tom X. Tong , Intel, Hillsboro, OR

Summary:

A new fault isolation technique, Electron Beam Induced Resistance Change, allows for the direct stimulation and localization of eBeam current sensitive defects with resolution of approximately 100nm^2.
See more of: Nanoprobing and Electrical Characterization
See more of: Technical Program