3.2
Extending Electrical Scanning Probe Microscopy Measurements of Semiconductor Devices using Microwave Impedance Microscopy
Extending Electrical Scanning Probe Microscopy Measurements of Semiconductor Devices using Microwave Impedance Microscopy
Monday, November 2, 2015: 1:25 PM
Meeting Room D139 & 140 (Oregon Convention Center )
Summary:
Atomic force microscope [AFM] based electrical measurement techniques such as scanning capacitance microscopy [SCM], which has existed for more than three decades, have shown value in many circumstances, but suffer from significant limitations.Scanning Microwave Impedance Microscopy [sMIM], which directly measures the real (called sMIM-R) and imaginary parts (sMIM-C) of the impedance interface between the AFM tip and sample, adds significant electrical measurement capability over existing techniques while simultaneously producing the same dC/dV measurements as SCM
Atomic force microscope [AFM] based electrical measurement techniques such as scanning capacitance microscopy [SCM], which has existed for more than three decades, have shown value in many circumstances, but suffer from significant limitations.Scanning Microwave Impedance Microscopy [sMIM], which directly measures the real (called sMIM-R) and imaginary parts (sMIM-C) of the impedance interface between the AFM tip and sample, adds significant electrical measurement capability over existing techniques while simultaneously producing the same dC/dV measurements as SCM