3.2
Extending Electrical Scanning Probe Microscopy Measurements of Semiconductor Devices using Microwave Impedance Microscopy

Monday, November 2, 2015: 1:25 PM
Meeting Room D139 & 140 (Oregon Convention Center )
Mr. Benedict Drevniok , Chipworks Inc., Ottawa, ON, Canada
Sinjin Dixon-Warren , Chipworks Inc., Ottawa, ON, Canada
Oskar Amster , Prime Nano, Palo Alto, CA
Stuart L Friedman , Prime Nano, Palo Alto, CA
Yongliang Yang , Prime Nano, Palo Alto, CA

Summary:

Atomic force microscope [AFM] based electrical measurement techniques such as scanning capacitance microscopy [SCM], which has existed for more than three decades, have shown value in many circumstances, but suffer from significant limitations.Scanning Microwave Impedance Microscopy [sMIM], which directly measures the real (called sMIM-R) and imaginary parts (sMIM-C) of the impedance interface between the AFM tip and sample, adds significant electrical measurement capability over existing techniques while simultaneously producing the same dC/dV measurements as SCM
See more of: Scanning Probe Analysis
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