29.2
Characterization of 88/144 nm SOI Wafers Produced by Separate Process Technologies Using Optical Second Harmonic Generation
Characterization of 88/144 nm SOI Wafers Produced by Separate Process Technologies Using Optical Second Harmonic Generation
Wednesday, November 4, 2015
Exhibit Hall D (Oregon Convention Center )
Summary:
Using non-destructive Optical Second Harmonic Generation (SHG) we have characterized Silicon-on-Insulator (SOI) wafers manufactured by two distinct leading process technologies. After parsing out the SHG signal contribution from layer thickness on each wafer, three areas of anomalous signal remained on wafer A. Results on two of the anomalous areas by destructive quantitative techniques indicate subsurface trace metal contamination.
Using non-destructive Optical Second Harmonic Generation (SHG) we have characterized Silicon-on-Insulator (SOI) wafers manufactured by two distinct leading process technologies. After parsing out the SHG signal contribution from layer thickness on each wafer, three areas of anomalous signal remained on wafer A. Results on two of the anomalous areas by destructive quantitative techniques indicate subsurface trace metal contamination.