11
Metrology and In-line Device Characterization

Wednesday, November 4, 2015: 8:00 AM-8:50 AM
Meeting Room D139 & 140 (Oregon Convention Center )
Session Chairs:  Mr. Bryan Tracy, Evans Analytical Group, Sunnyvale, CA and Dr. Huimeng Wu, Ion Beam Application, Carl Zeiss Microscopy, LLC, Peabody, MA
8:00 AM
11.1
In-Line Detection of Deep Trench Moat Underetch Defects Using E-beam Inspection
Mr. Richard Hafer, GLOBALFOUNDRIES; Mr. Brian Messenger, GLOBALFOUNDRIES; Mr. Mark Dekker, GLOBALFOUNDRIES; Dr. Oliver D. Patterson, GLOBALFOUNDRIES; Mr. Xiaohu Tang, Hermes Microvision Inc; Mr. Shuen-Cheng Lei, Hermes Microvision Inc; Yi Feng, GLOBALFOUNDRIES
8:25 AM
11.2
SIMS Quantitative Analysis and Optimization for Ion Implantation Angle Deviation
Mr. Jiangbei Shi, Semiconductor Manufacturing International (Tianjin) Corporation; Dr. Weiting Chien, Semiconductor Manufacturing International (Tianjin) Corporation; Mr. Qihua Zhang, Semiconductor Manufacturing International (Tianjin) Corporation; Mr. Zhenyuan Li, Semiconductor Manufacturing International (Tianjin) Corporation; Mr. Xiaogang Zheng, Semiconductor Manufacturing International (Tianjin) Corporation; Mr. Aimin Li, Semiconductor Manufacturing International (Tianjin) Corporation
See more of: Technical Program
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