Investigation of Phase Change Memory Confined Cell Endurance Using Transmission Electron Microscopy (TEM)
Investigation of Phase Change Memory Confined Cell Endurance Using Transmission Electron Microscopy (TEM)
Wednesday, November 9, 2016: 3:55 PM
110AB (Fort Worth Convention Center)
Summary:
The endurance performance of a novel confined phase change memory cell with metallic nitride liner is investigated using transmission electron microscope (TEM). Write endurance has been shown to be substantially improved by this new structure [1]. Memory cells cycled up to 109 were cross-sectioned and studied by TEM. Majority of the endurance failure mechanism is electrically observed, stuck-SET. Physical failure analysis shows the failed cell is always associated with large void formation and material segregation. In-situ TEM analysis is used to study the void formation, accumulation and movement, where the memory cell is simultaneously operated and imaged in TEM. An interesting self-healing process of the void during the set/reset operation was recorded.
The endurance performance of a novel confined phase change memory cell with metallic nitride liner is investigated using transmission electron microscope (TEM). Write endurance has been shown to be substantially improved by this new structure [1]. Memory cells cycled up to 109 were cross-sectioned and studied by TEM. Majority of the endurance failure mechanism is electrically observed, stuck-SET. Physical failure analysis shows the failed cell is always associated with large void formation and material segregation. In-situ TEM analysis is used to study the void formation, accumulation and movement, where the memory cell is simultaneously operated and imaged in TEM. An interesting self-healing process of the void during the set/reset operation was recorded.