Locating Gate Oxide Failures Using KOH
Locating Gate Oxide Failures Using KOH
Wednesday, November 9, 2016
Summary:
Electrical fault isolation using emission microscopy produces a response site that pinpoints the location of the gate oxide failure. Getting the physical evidence of the sub-micron gate oxide failure has always been the challenge. Cross sectioning through a response site is frequently unsuccessful in finding the sub-micron failure. The rupture site is typically consumed in the FIB slice or the resolution of the tool is limited. Two methods of using KOH to stop on the gate oxide will be offered as a successful means to get the physical evidence needed to tie the electrical data to the fail.
Electrical fault isolation using emission microscopy produces a response site that pinpoints the location of the gate oxide failure. Getting the physical evidence of the sub-micron gate oxide failure has always been the challenge. Cross sectioning through a response site is frequently unsuccessful in finding the sub-micron failure. The rupture site is typically consumed in the FIB slice or the resolution of the tool is limited. Two methods of using KOH to stop on the gate oxide will be offered as a successful means to get the physical evidence needed to tie the electrical data to the fail.