Intra-Device Defect Localization through EBIC/EBAC combined with Electrical Nano-probing for FinFET Devices Composed of Multiple Sub-elements

Monday, November 7, 2016: 12:35 PM
110AB (Fort Worth Convention Center)
Dr. Daminda Dahanayaka , Globalfoundries, Essex Junction, VT
Mr. Daniel A. Bader , Globalfoundries, Essex Junction, VT
Mr. Dennis P. Prevost Jr. , Globalfoundries, Essex Junction, VT
Mr. Michael T. Coster , Globalfoundries, Essex Junction, VT
Dr. Erik F. Mccullen , Globalfoundries, Essex Junction, VT

Summary:

Physical failure analysis of microelectronics devices is typically performed using plan view or cross-sectional TEM, SEM or SPM techniques. While plan view SPM and SEM analyses are limited by the depth sensitivity of the technique, cross-sectional analysis requires the at least approximate localization of the fail location within the device for effective sample preparation. Multi-finger wide 2D planar devices and multi-FIN 3D devices are structures which require an additional step in pinpointing the fail area within the device. This paper describes successful use of EBIC/EBAC techniques to localize the fail location within such devices in both the 22nm and 14 nm technology nodes.