Intra-Device Defect Localization through EBIC/EBAC combined with Electrical Nano-probing for FinFET Devices Composed of Multiple Sub-elements
Intra-Device Defect Localization through EBIC/EBAC combined with Electrical Nano-probing for FinFET Devices Composed of Multiple Sub-elements
Monday, November 7, 2016: 12:35 PM
110AB (Fort Worth Convention Center)
Summary:
Physical failure analysis of microelectronics devices is typically performed using plan view or cross-sectional TEM, SEM or SPM techniques. While plan view SPM and SEM analyses are limited by the depth sensitivity of the technique, cross-sectional analysis requires the at least approximate localization of the fail location within the device for effective sample preparation. Multi-finger wide 2D planar devices and multi-FIN 3D devices are structures which require an additional step in pinpointing the fail area within the device. This paper describes successful use of EBIC/EBAC techniques to localize the fail location within such devices in both the 22nm and 14 nm technology nodes.
Physical failure analysis of microelectronics devices is typically performed using plan view or cross-sectional TEM, SEM or SPM techniques. While plan view SPM and SEM analyses are limited by the depth sensitivity of the technique, cross-sectional analysis requires the at least approximate localization of the fail location within the device for effective sample preparation. Multi-finger wide 2D planar devices and multi-FIN 3D devices are structures which require an additional step in pinpointing the fail area within the device. This paper describes successful use of EBIC/EBAC techniques to localize the fail location within such devices in both the 22nm and 14 nm technology nodes.