Method of Recovering SEM Inspection Induced MOSFETs Degradation Before Electrical Characterization
Method of Recovering SEM Inspection Induced MOSFETs Degradation Before Electrical Characterization
Monday, November 7, 2016: 3:15 PM
110AB (Fort Worth Convention Center)
Summary:
The SEM with 0.5KeV acceleration voltage can also degrade nMOS and pMOS devices at 20nm technology node. The cause of the degradation is the positive charge trapped in the gate oxide during SEM exposure. A UV light radiation can recover most of device damage. As a result, UV light curing or other curing methods are necessary to recover the performance of the device after an SEM inspection.
The SEM with 0.5KeV acceleration voltage can also degrade nMOS and pMOS devices at 20nm technology node. The cause of the degradation is the positive charge trapped in the gate oxide during SEM exposure. A UV light radiation can recover most of device damage. As a result, UV light curing or other curing methods are necessary to recover the performance of the device after an SEM inspection.