Located single device leakage path of the 0.13um VLSI via Lock-in Thermography
Located single device leakage path of the 0.13um VLSI via Lock-in Thermography
Wednesday, November 9, 2016
Summary:
The miss used standard cell in a VLSI is located by Lock-in thermography with issued sample only. In our finding, lockin thermography demostrate a single device resolution in a 0.13um technology node. lockin thermography is a promising methodology in electrical failure analysis.
The miss used standard cell in a VLSI is located by Lock-in thermography with issued sample only. In our finding, lockin thermography demostrate a single device resolution in a 0.13um technology node. lockin thermography is a promising methodology in electrical failure analysis.