Located single device leakage path of the 0.13um VLSI via Lock-in Thermography

Wednesday, November 9, 2016
Dr. Chao-Cheng Ting , Faraday Technology Corp., Hsin Chu, Taiwan

Summary:

The miss used standard cell in a VLSI is located by Lock-in thermography with issued sample only. In our finding, lockin thermography demostrate a single device resolution in a 0.13um technology node. lockin thermography is a promising methodology in electrical failure analysis.