Study on Effect of Electron Beam Irradiation in SEM-based Nanoprobing on MOS Transistor

Wednesday, November 9, 2016
Ms. Noriko Hara , Toshiba Nanoanalysis Corporation, Kawasaki, Japan
Mr. Nanami Bito , Toshiba Nanoanalysis Corporation, Kawasaki, Japan
Ms. Mai Ebisuda , Toshiba Nanoanalysis Corporation, Kawasaki, Japan
Mr. Suguru Tabata , Toshiba Nanoanalysis Corporation, Kawasaki, Japan
Mr. Naoki Numazaki , Toshiba Nanoanalysis Corporation, Kawasaki, Japan
Mr. Kazunori Masuda , Toshiba, Yokohama, Japan
Mr. Naoya Kami , Toshiba, Yokohama, Japan

Summary:

We observed no electron beam damage with SEM at the acceleration voltage. As the critical voltage depends on cell design and process, we show the example of evaluation of electron beam critical voltage for SEM-based nanoprober, comparing to mechanical prober, AFP and SEM-based throughout the same transistor cell.
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