Nanoscale capacitance-voltage curves for advanced characterization of electrical properties of Si and GaN structures using Scanning Microwave Impedance Microscopy (sMIM)
Nanoscale capacitance-voltage curves for advanced characterization of electrical properties of Si and GaN structures using Scanning Microwave Impedance Microscopy (sMIM)
Wednesday, November 9, 2016: 8:50 AM
110AB (Fort Worth Convention Center)
Summary:
The use of Atomic Force Microscopy (AFM) electrical measurement modes is a critical tool for the study of semiconductor devices and process development. A relatively new electrical mode, scanning microwave impedance microscopy (sMIM), measures a material’s change in permittivity and conductivity at the scale of an AFM probe tip. By measuring the reflected microwave signal as a sample of interest is imaged with an AFM we can in parallel capture the variations in permittivity and conductivity and, for doped semiconductors, the doping polarity and type.
The use of Atomic Force Microscopy (AFM) electrical measurement modes is a critical tool for the study of semiconductor devices and process development. A relatively new electrical mode, scanning microwave impedance microscopy (sMIM), measures a material’s change in permittivity and conductivity at the scale of an AFM probe tip. By measuring the reflected microwave signal as a sample of interest is imaged with an AFM we can in parallel capture the variations in permittivity and conductivity and, for doped semiconductors, the doping polarity and type.