Scanning Probe Analysis I

Wednesday, November 9, 2016: 8:00 AM-9:40 AM
110AB (Fort Worth Convention Center)
Chairs:  Mrs. Rosalinda-Mendoza Ring, Qorvo, Greensboro, NC
Co-chairs:  Mr. David L. Burgess, Accelerated Analysis, Half Moon Bay, CA
8:00 AM
Two-dimensional local deep level transient spectroscopy imaging using super-higher-order scanning nonlinear dielectric microscopy
Mr. Norimichi Chinone, Tohoku University; Dr. Ryoji Kosugi, National Institute of Advanced Industrial Science and Technology; Dr. Yasuonori Tanaka, National Institute of Advanced Industrial Science and Technology; Dr. Shinsuke Harada, National Institute of Advanced Industrial Science and Technology; Dr. Hajime Okumura, National Institute of Advanced Industrial Science and Technology; Prof. Yasuo Cho, Tohoku University
8:25 AM
Characterizing organic nanocontamination in semiconductors by resonance enhanced AFM-IR
Dr. Anirban Roy, Anasys Instruments Inc.
8:50 AM
Nanoscale capacitance-voltage curves for advanced characterization of electrical properties of Si and GaN structures using Scanning Microwave Impedance Microscopy (sMIM)
Dr. Stuart L friedman, PrimeNano, Inc.; Dr. Fred Stanke, PrimeNano, Inc.; Mr. Oskar Amster, PrimeNano, Inc.; Dr. Yongliang Yang, PrimeNano, Inc.
9:15 AM
INVITED TALK: Survey of common AFM electrical modes used in semiconductor Failure Analysis with further discussion of novel electrical modes that extend the capabilities for high resolution device characterization
Mr. Oskar Amster, PrimeNano, Inc.
See more of: Technical Program
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