Fault Isolation I

Wednesday, November 8, 2017: 8:00 AM-9:40 AM
Ballroom A (Pasadena Convention Center)
Dr. Keith A. Serrels, NXP Semiconductors and Mr. Kent Erington, NXP Semiconductor
8:00 AM
Time Resolved LADA using a modulated pulsed laser to fault isolate bridging defects and framing high accuracy Physical FA plan in 14nm FinFET technologies.
Mr. Gaurav S. Mattey, Qualcomm Technologies, Inc.; Dr. Lavakumar Ranganathan, Qualcomm Technologies Inc.
8:25 AM
Ultra-low frequency laser voltage imaging of mixed-signal designs
Dr. Tobias Schmidutz, Infineon Technologies
8:50 AM
Characterization of Dynamic Laser Stimulation Approach to Locate Memory Fails Using EeLADA
Dr. SH Goh, GLOBALFOUNDRIES Singapore Pte Ltd; CC Tay, Mentor, A Siemens Business
9:15 AM
The Effects of Using 785nm for Laser Probing
Mr. Neel Leslie, FEI Company; Mr. Christopher Nemirow, Ph.D, FEI Company
See more of: Technical Program