Ambient Temperature Thermally Induced Voltage Alteration (TIVA) for Identification of Defects in Superconducting Electronics

Wednesday, October 31, 2018: 9:15 AM
225AB (Phoenix Convention Center)
Mr. Mark Jenkins , Sandia National Laboratories, Albuquerque, NM
Dr. Paiboon Tangyunyong , Sandia National Laboratories, Albuquerque, NM
Dr. Nancy A. Missert , Sandia National Laboratories, Albuquerque, NM
Dr. Igor V. Vernik , HYPRES, Elmsford, NY
Dr. Alex Kirichenko , HYPRES, Elmsford, NY
Dr. Oleg Mukhanov , HYPRES, Elmsford, NY
Mr. Alexander Wynn , MIT Lincoln Laboratory, Lexington, MA
Mrs. Alexandra L. Day , MIT Lincoln Laboratory, Lexington, MA
Vladimir Bolkhovsky , MIT Lincoln Laboratory, Lexington, MA
Mr. Leonard Johnson , MIT Lincoln Laboratory, Lexington, MA

Summary:

As research in superconducting electronics matures, it is necessary to have failure analysis techniques to identify parameters that impact yield and failure modes in the fabricated product. However, there has been significant skepticism regarding the ability of laser-based failure analysis techniques to detect defects at room temperature in superconducting electronics designed to operate at cryogenic temperatures. In this paper, we describe preliminary data showing the use of Thermally Induced Voltage Alteration (TIVA) [1] at ambient temperature to locate defects in a known defective circuit fabricated using state-of-the-art techniques for superconducting electronics.
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