Enhanced Scanning Nonlinear Dielectric Microscopy with Stepwise dC/dV and dC/dz Imaging: Achieving Qualitative, Quantitative and Artifact-free Carrier Density Profiling of Semiconductor Devices
Enhanced Scanning Nonlinear Dielectric Microscopy with Stepwise dC/dV and dC/dz Imaging: Achieving Qualitative, Quantitative and Artifact-free Carrier Density Profiling of Semiconductor Devices
Monday, October 29, 2018: 1:50 PM
226BC (Phoenix Convention Center)
Summary:
We have achieved qualitative, quantitative and artifact-free carrier density profiling carrier distribution measurements of semiconductor devices by scanning nonlinear dielectric microscopy with stepwise dC/dV and dC/dz imaging, and applied this method to IMEC's n- and p-doped Si staircase standard samples and Si power MOSFET device.
We have achieved qualitative, quantitative and artifact-free carrier density profiling carrier distribution measurements of semiconductor devices by scanning nonlinear dielectric microscopy with stepwise dC/dV and dC/dz imaging, and applied this method to IMEC's n- and p-doped Si staircase standard samples and Si power MOSFET device.