Scanning Probe Analysis I

Monday, October 29, 2018: 1:00 PM-3:05 PM

226BC (Phoenix Convention Center)

Dr. Paiboon Tangyunyong, Sandia National Laboratories and Mr. Phil Kaszuba, Globalfoundries

1:00 PM

Quantitative imaging of carrier distribution in silicon solar cell using scanning nonlinear dielectric microscopy
Mr. Kotaro Hirose, Tohoku University; Dr. Katsuto Tanahashi, National Institute of Advanced Industrial Science and Technology; Mr. Hidetaka Takato, National Institute of Advanced Industrial Science and Technology; Prof. Yasuo Cho, Tohoku University

1:25 PM

1:50 PM

Enhanced Scanning Nonlinear Dielectric Microscopy with Stepwise dC/dV and dC/dz Imaging: Achieving Qualitative, Quantitative and Artifact-free Carrier Density Profiling of Semiconductor Devices
Dr. Takehiro Yamaoka, Hitachi High-Technologies; Mr. Satoshi Hasumura, Hitachi High-Tech Science Corporation; Dr. Ryusuke Hirose, Hitachi High-Tech Science Corporation; Mr. Toshihiko Ueno, Hitachi High-Technologies; Mr. Keita Tamura, Hitachi High-Technologies; Dr. Jing-Jiang Yu, Hitachi High Technologies America, Inc.

2:15 PM

Die-Level Scanning Capacitance Microscopy Fault Isolation on SOI Fin-FET Devices for Advanced Semiconductor Nodes
Dr. Lucile C. Teague Sheridan, Ph.D., GLOBALFOUNDRIES Inc.; Ms. Tanya Schaeffer, GLOBALFOUNDRIES Inc.; Dr. Yuting Wei, GLOBALFOUNDRIES Inc.; Mr. Satish Kodali, GLOBALFOUNDRIES Inc.; Mr. Chong Khiam Oh, GLOBALFOUNDRIES Inc.

2:40 PM

Novel carrier measurement methodology for floating gate of sub-20 nm node flash memory using scanning nonlinear dielectric microscopy
Mr. Jun Hirota, Toshiba Memory Corporation; Prof. Yuji Yamagishi, Tohoku University; Dr. Shiro Takeno, Toshiba Memory Corporation; Prof. Yasuo Cho, Tohoku University

See more of: Technical Program