Accurate Defect Localization of Stacked Die Devices by Lock-in Thermography (LIT)
Accurate Defect Localization of Stacked Die Devices by Lock-in Thermography (LIT)
Tuesday, October 30, 2018: 1:50 PM
226BC (Phoenix Convention Center)
Summary:
The article demonstrated the moving of lock-in thermography (LIT) spot location by adjusting lock-in frequency from low to high. Accurate defect localization in stacked die devices was decided by the fixed LIT spot location after the lock-in frequency was higher than a specific value depending on the depth of the defect in the IC. Physical failure analysis was performed based on LIT results which provided clear physical defect modes of the stacked-die devices.
The article demonstrated the moving of lock-in thermography (LIT) spot location by adjusting lock-in frequency from low to high. Accurate defect localization in stacked die devices was decided by the fixed LIT spot location after the lock-in frequency was higher than a specific value depending on the depth of the defect in the IC. Physical failure analysis was performed based on LIT results which provided clear physical defect modes of the stacked-die devices.