High-resolution resistance mapping in SEM

Thursday, November 1, 2018: 10:15 AM
225AB (Phoenix Convention Center)
Dr. Grigore Moldovan , point electronic GmbH, Halle, Germany
Mr. Jörg Jatzkowski , Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Halle, Germany
Mr. Guillaume Boetsch , Imina Technologies SA, Lausanne, Switzerland
Mr. Wolfgang Joachimi , point electronic GmbH, Halle, Germany
Mr. Frank Altmann , Fraunhofer Institute for Microstructure of Materials and Systems, Halle, Germany

Summary:

This work presents an overview and an update on resistance mapping in Scanning Electron Microscopy (SEM) using Electron Beam Absorbed Current (EBAC) signals acquired with nanoprobing systems. Recent advances include integration into the nanoprobing platform of dedicated in situ electronics to minimize noise and increase speed, as well as a transition to voltage sensitive amplification to improve resistance sensitivity beyond the 10 Ohms range and to allow for mapping of resistors as low as 100 Ohms.
See more of: Microscopy II
See more of: Technical Program