Non-Destructive 3D Failure Analysis Workflow for Electrical Failure Analysis in Complex 2.5D-Based Devices Combining 3D Magnetic Field Imaging and 3D X-Ray Microscopy

Monday, October 29, 2018: 3:50 PM
225AB (Phoenix Convention Center)
Dr. Antonio Orozco , Neocera, LLC, Beltsville, MD
Ms. Elena Talanova , Neocera, LLC, Beltsville, MD
Mr. Alex Jeffers , Neocera, LLC, Beltsville, MD
Ms. Florencia Rusli , Neocera, LLC, Beltsville, MD
Ms. Bernice Zee , Advanced Micro Devices (AMD), Singapore, Singapore
Ms. Wen Qiu , Advanced Micro Devices (AMD), Singapore, Singapore
Syahirah MD Zulkifli , Advanced Micro Devices (AMD), Singapore, Singapore
Dr. Allen Gu , ZEISS SMT Process Control Solutions, Pleasanton, CA
Mr. Juan Atkinson Mora , ZEISS SMT Process Control Solutions, Pleasanton, CA

Summary:

In this paper, we apply 3D MFI in combination with 3D XRM to the 3D defect localization of an electrical short failure in a complex 2.5D device combining High Bandwidth Memory (HBM) devices and an Application Specific Integrated Circuit (ASIC) unit on a Si interposer.
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