A Root Cause TEM Investigation of Leakage Failures in Compound Semiconductors Using a Novel FIB-Based Fault Isolation Technique
A Root Cause TEM Investigation of Leakage Failures in Compound Semiconductors Using a Novel FIB-Based Fault Isolation Technique
Thursday, November 1, 2018: 9:15 AM
226BC (Phoenix Convention Center)
Summary:
Using FIB re-sputtering the location of leakage causing dislocations can be identified for TEM analysis. The identification method is selective and localized.
Using FIB re-sputtering the location of leakage causing dislocations can be identified for TEM analysis. The identification method is selective and localized.