(V) Plasma Etching Pre-treatment for a TEM Lamella Preparation of 3D NAND with High Aspect Ratio
(V) Plasma Etching Pre-treatment for a TEM Lamella Preparation of 3D NAND with High Aspect Ratio
Thursday, November 4, 2021: 2:35 PM
104 ABC (Phoenix Convention Center)
Summary:
We have introduced a practical method for etching high aspect ratio samples. Considering the high capital and maintenance cost of PFIB and etching damage issue of Ga-FIB, the plasma etching system becomes an alternative approach. Compared to the Ga-FIB etching approach, the high aspect ratio samples etched by plasma etching systems showed high uniformity, large etching area and undamaged slit sidewalls. Furthermore, by controlling the etching time, the removal of the specific numbers of WLs could be achieved, which can help us to completely analyze the high aspect ratio sample. This method could be applied in other high aspect ratio cases by modulating the plasma etching conditions.
We have introduced a practical method for etching high aspect ratio samples. Considering the high capital and maintenance cost of PFIB and etching damage issue of Ga-FIB, the plasma etching system becomes an alternative approach. Compared to the Ga-FIB etching approach, the high aspect ratio samples etched by plasma etching systems showed high uniformity, large etching area and undamaged slit sidewalls. Furthermore, by controlling the etching time, the removal of the specific numbers of WLs could be achieved, which can help us to completely analyze the high aspect ratio sample. This method could be applied in other high aspect ratio cases by modulating the plasma etching conditions.