(V) SAMPLE PREPARATION AND DEVICE DEPROCESSING: Fast and Effective Sample Preparation Technique for Backside Fault Isolation on GaN packaged devices
(V) SAMPLE PREPARATION AND DEVICE DEPROCESSING: Fast and Effective Sample Preparation Technique for Backside Fault Isolation on GaN packaged devices
Wednesday, November 3, 2021
West Hall 1-2 (Phoenix Convention Center)
Summary:
This paper describes a fast and effective sample preparation method to allow backside fault localization on GaN package devices. Backside analysis by Photo Emission Microscopy (PEM) is becoming preferable to frontside analysis when the die is covered by metal layers. This paper describes an optimized method for backside sample preparation on GaN package devices having a thick heavily doped p-type Silicon substrate. The method combines mechanical and chemical deprocessing steps, resulting in a fast and effective sample preparation technique for PEM analysis. Additionally, the laser marking process parameters to facilitate orientation during the final physical failure analysis by Focused Ion Beam (FIB) are also shared.
This paper describes a fast and effective sample preparation method to allow backside fault localization on GaN package devices. Backside analysis by Photo Emission Microscopy (PEM) is becoming preferable to frontside analysis when the die is covered by metal layers. This paper describes an optimized method for backside sample preparation on GaN package devices having a thick heavily doped p-type Silicon substrate. The method combines mechanical and chemical deprocessing steps, resulting in a fast and effective sample preparation technique for PEM analysis. Additionally, the laser marking process parameters to facilitate orientation during the final physical failure analysis by Focused Ion Beam (FIB) are also shared.