MICROSCOPY AND MATERIAL CHARACTERIZATION: Automated Metrology of verticality of Cross-sectioned channel hole at V-NAND with over 200 layers by Transmission Electron microscope
MICROSCOPY AND MATERIAL CHARACTERIZATION: Automated Metrology of verticality of Cross-sectioned channel hole at V-NAND with over 200 layers by Transmission Electron microscope
Wednesday, November 3, 2021
West Hall 1-2 (Phoenix Convention Center)
Summary:
In this paper, we present a nanoscale measurement of verticality method for V-NAND with 200 or more layers of high layers using an automated TEM, which has been developed a lot in the field of analysis technology.
In this paper, we present a nanoscale measurement of verticality method for V-NAND with 200 or more layers of high layers using an automated TEM, which has been developed a lot in the field of analysis technology.