(V) SCANNING PROBE ANALYSIS: Non-visual defect identification by dopant analysis method in FinFET devices

Wednesday, November 3, 2021
West Hall 1-2 (Phoenix Convention Center)
Mr. Seungjun Son , Samsung Austin Semiconductor, LLC, Austin, TX
Mr. Christopher Penley , Samsung Austin Semiconductor, LLC, Austin, TX
Mr. Jeffrey Hurst , Samsung Austin Semiconductor, LLC, Austin, TX
Mr. Christopher Michon , Samsung Austin Semiconductor, LLC, Austin, TX
Dr. Yong Guo , Samsung Austin Semiconductor, LLC, Austin, TX
Mr. Rafael Lainez , Samsung Austin Semiconductor, LLC, Austin, TX
Dr. Jason Reifsnider , Samsung Austin Semiconductor, LLC, Austin, TX

Summary:

AFM (TUNA) analysis was able to clearly visualize the dopant discrepancies in comparison between the IDDQ fail and pass references in FinFET transistors. The dopant abnormalities indicated the current IDDQ fail was caused by processes that impaired the dopant implantation.
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