PRODUCT YIELD, TEST & DIAGNOSTICS: Electrical Screening Method of VNAND Flash Channel Hole Bending Defects
PRODUCT YIELD, TEST & DIAGNOSTICS: Electrical Screening Method of VNAND Flash Channel Hole Bending Defects
Wednesday, November 3, 2021
West Hall 1-2 (Phoenix Convention Center)
Summary:
A novel characterization method has been proposed to electrically screen the channel hole bending defects in high-density 3D VNAND flash memory. The channel hole bending (ChB) defects lead to the leakage current between the two adjacent channel holes, which causes a fatal failure in storage systems. Therefore, screening ChB defect in advance is key factor of NAND manufacturing. To efficiently detect ChB defect, we exploited a 3D checkerboard (CKBD) pattern, which means alternating programed (‘0’) and inhibited (‘1’) cells in a diagonal and horizontal direction. By measuring the hole-to-hole leakage current, ChB defect can be successfully detected in an electrical fashion.
A novel characterization method has been proposed to electrically screen the channel hole bending defects in high-density 3D VNAND flash memory. The channel hole bending (ChB) defects lead to the leakage current between the two adjacent channel holes, which causes a fatal failure in storage systems. Therefore, screening ChB defect in advance is key factor of NAND manufacturing. To efficiently detect ChB defect, we exploited a 3D checkerboard (CKBD) pattern, which means alternating programed (‘0’) and inhibited (‘1’) cells in a diagonal and horizontal direction. By measuring the hole-to-hole leakage current, ChB defect can be successfully detected in an electrical fashion.