Resistive Open Defect Isolation in Nano-probing

Thursday, November 4, 2021: 10:15 AM
105 AB (Phoenix Convention Center)
Dr. Yunfei Wang , Intel Corporation, Hillsboro, OR
Dr. Hyuk Ju Ryu , Intel, Hillsboro, OR
Dr. Tom X. Tong , Intel, Hillsboro, OR
Mr. Dan Bockelman , Intel, Hillsboro, OR

Summary:

In this paper, we present case studies of localizing resistive open defects using various FA techniques, including two-terminal IV, two-terminal EBAC, EBIRCh, Pulsed IV, CV and SCM. The advantage and limitation of each technique will be discussed.