CASE STUDIES: DEVICE ANALYSIS - SCM Application and Failure Analysis Procedure for Ion-implantation Issues in Power Devices
CASE STUDIES: DEVICE ANALYSIS - SCM Application and Failure Analysis Procedure for Ion-implantation Issues in Power Devices
Wednesday, November 3, 2021
West Hall 1-2 (Phoenix Convention Center)
Summary:
This research summarizes failure analysis results about ion-implantation related issues in Si-based power devices, including diode, MOSFET and IGBT. To find out this kind of defects, sample preparation, fault isolation and SCM inspection are critical steps, which will be explained in detail in this paper.
This research summarizes failure analysis results about ion-implantation related issues in Si-based power devices, including diode, MOSFET and IGBT. To find out this kind of defects, sample preparation, fault isolation and SCM inspection are critical steps, which will be explained in detail in this paper.