EBIRCH localization for low-current soft fails
EBIRCH localization for low-current soft fails
Thursday, November 4, 2021: 11:05 AM
105 AB (Phoenix Convention Center)
Summary:
SRAM devices intentionally overstressed at successfully higher voltages, then EBIRCH analyzed. This work shows successful EBIRCH localization at only 12 nA of current. Subsequent analyses provide evidence for mechanism of EBIRCH effect.
SRAM devices intentionally overstressed at successfully higher voltages, then EBIRCH analyzed. This work shows successful EBIRCH localization at only 12 nA of current. Subsequent analyses provide evidence for mechanism of EBIRCH effect.