Defect Isolation in Advanced Nodes Large Circuitry Structures using a Combination of FIB Circuit Edits and Passive Voltage Contrast

Monday, November 13, 2023: 11:10 AM
104 A-B (Phoenix Convention Center)
Dr. Michael Rodder , Samsung Austin Semiconductor, LLC, Austin, TX
Gina Cha , Samsung Austin Semiconductor, LLC, Austin, TX
Gilbert Tovar , Samsung Austin Semiconductor, LLC, Austin, TX
Mr. Kah Chin Cheong , Samsung Austing Semiconductor LLC., Austin, TX
Mr. Christopher Penley , Samsung Austin Semiconductor, LLC, Austin, TX

Summary:

In this paper, we discuss and showcase a 2-step defect isolation methodology by combining Focused Ion Beam “circuit editing” (FIB circuit edit) and Passive Voltage Contrast (PVC) imaging. The combo technique is an effective, robust, and time saving method for isolating defects in large area circuit structures for advanced nodes. The application of FIB circuit edits successfully enhanced the PVC efficiency in defect isolation. More importantly, the developed 2-step methodology improves failure analysis (FA) success rate and quality, and reduces FA turn-around-time (TAT).