Identifying Electrically Active Dislocations in GaN and the Challenge of Cross-Correlative Physical Characterization

Monday, November 13, 2023: 1:20 PM
103 A-B (Phoenix Convention Center)
Ms. Ze F. Scales , KAI GmbH, Villach, Carinthia, Austria, Technical University of Vienna, Vienna, Vienna, Austria
Dr. Christian Koller , KAI GmbH, Villach, Carinthia, Austria
Dr. Stephan Schoemann , Infineon Technologies AG, Neubiberg, Austria
Dr. Michael Nelhiebel , KAI GmbH, Villach, Carinthia, Austria
Dr. Michael Reisinger , KAI GmbH, Villach, Carinthia, Austria
Mr. Joerg Jatzkowski , Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Halle, Saxony-Anhalt, Germany
Mr. Patrick Diehle , Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Halle, Saxony-Anhalt, Germany
Dr. Michael Stoeger-Pollach , Technical University of Vienna, Vienna, Vienna, Austria

See more of: Power Devices (Si, SiC, GaN) II
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