Power Devices (Si, SiC, GaN) II
Monday, November 13, 2023: 1:20 PM-2:20 PM
103 A-B (Phoenix Convention Center)
Mr. Helmut Angerer, Infineon and Dr. Marc Fouchier, Attolight
1:40 PM
Backside Fault Localization and defect physical analysis of degraded power HEMT p-GaN transistors stressed in DC and AC modes.
Mr. Lucien Ghizzo, THALES SIX France SAS, LAAS-CNRS, LAPLACE;
Dr. Gérald Guibaud, THALES SIX France SAS;
Mr. François Jamin, THALES SIX France SAS;
Mrs. Vanessa Chazal, THALES SIX France SAS;
Dr. David Trémouilles, LAAS-CNRS;
Dr. Richard Monflier, LAAS-CNRS;
Dr. Frédéric Richardeau, LAPLACE;
Dr. Guillaume Bascoul, Centre National d'Etudes Spatiales (CNES);
Dr. Manuel Gonzáles Sentís, Centre National d'Etudes Spatiales (CNES);
Dr. Christophe De Nardi, THALES SIX France SAS
2:00 PM
SiC MOSFET micro-explosion due to a Single Event Burnout: analysis at the device and die levels
Dr. Rosine COQ GERMANICUS, Normandie Univ, Ensicaen, Unicaen, CNRS, CRISMAT UMR6508;
Dr. Tanguy PHULPIN, Université Paris-Saclay, CentraleSupélec, CNRS, GeePs, Sorbonne Université;
Prof. Thomas ROGAUME, Institut Pprime, UPR 3346 CNRS, Université de Poitiers, ISAE-ENSMA;
Dr. Kimmo NISKANEN, Accelerator Laboratory, Department of Physics, University of Jyvaskyla;
Ms. Sandrine FROISSART, Normandie Univ, Ensicaen, Unicaen, CNRS, CRISMAT, UMR6508;
Prof. Olivier LATRY, Groupe de Physique des Matériaux, Normandie Université, Unirouen, Insa Rouen;
Dr. Alain MICHEZ, Institut d'Electronique et des Systèmes (IES), Université de Montpellier, UMR-CNRS 5214;
Dr. Ulrike LÜDERS, Normandie Univ, Ensicaen, Unicaen, CNRS, CRISMAT, UMR6508
